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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 TYP. 8 3.0 MAX. 1500 800 12 30 125 5.0 4.0 UNIT V V A A W V A s
Tmb 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A
PINNING - SOT429
PIN 1 2 3 tab base collector emitter collector DESCRIPTION
PIN CONFIGURATION
SYMBOL
c b
Rbe
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 9 125 150 150 UNIT V V A A A A mA A W C C
average over any 20 ms period Tmb 25 C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS in free air TYP. 45 MAX. 1.0 UNIT K/W K/W
1 Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
STATIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL ICES ICES IEBO REB BVEBO VCEOsust VCEsat VBEsat hFE hFE VF PARAMETER Collector cut-off current
2
CONDITIONS VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 C VEB = 6.0 V; IC = 0 A VEB = 6.0 V IB = 600 mA IB = 0A;IC = 100mA; L= 25 mH IC = 8.0 A; IB = 1.6 A IC = 8.0 A; IB = 1.6 A IC = 1 A; VCE = 5 V IC = 8 A; VCE = 5 V IF = 8 A
MIN. 72 7.5 800 5
TYP. 110 55 13.5 11 7 1.6
MAX. 1.0 2.0 218 5.0 1.1 9.5 2.0
UNIT mA mA mA V V V V V
Emitter cut-off current Base-emitter resistance Emitter-base breakdown voltage Collector emitter-sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain Diode forward voltage
DYNAMIC CHARACTERISTICS
Tmb = 25 C unless otherwise specified SYMBOL Cc PARAMETER Collector capacitance Switching times (32 kHz line deflection circuit) ts tf Vfr tfr Turn-off storage time Turn-off fall time Anti-parallel diode forward recovery voltage Anti-parallel diode forward recovery time CONDITIONS IE = 0 A; VCB = 10 V; f = 1 MHz ICsat = 8.0 A; LC = 260 H; Cfb = 13 nF; IB(end) = 1.1 A; LB = 2.5 H; -VBB = 4 V; (-dIB/dt = 1.6 A/s) TYP. 145 MAX. UNIT pF
3.0 0.2 16 410
4.0 0.35
s s V ns
IF = 8 A; dIF/dt = 50 A/s VF = 5 V
TRANSISTOR IC DIODE
ICsat
ICsat 90 %
t
IC
IB
IBend t 10us 13us 32us
ts IB IBend tf
10 %
t
VCE
t
t
- IBM
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
I
F
I
F
1.2 1.1 1
VBESAT / V
Tj = 25 C Tj = 125 C
BU2525A
10% t fr
V F time
0.9 0.8 0.7 0.6 IC/IB= 3 4 5 0.1 1 IC / A 10
5V
V F time
V
fr
0.5 0.4
Fig.3. Definition of anti-parallel diode Vfr and tfr
Fig.6. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
VCESAT / V IC/IB = 5 4 3 BU2525A
+ 150 v nominal adjust for ICsat
1 0.9 0.8
Lc
0.7 0.6 0.5
Tj = 25 C
D.U.T. IBend LB Cfb
Rbe
0.4 0.3 0.2 0.1 0 0.1
Tj = 125 C
-VBB
1 IC / A
10
100
Fig.4. Switching times test circuit
Fig.7. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
VBESAT / V
Tj = 25 C
hFE 100
BU2525D Tj = 25 C Tj = 125 C
1.2 1.1 1 0.9
BU2525A
Tj = 125 C
5V
10 1V
IC= 0.8 0.7 0.6
1 10 IC / A 100
8A 6A 5A 4A 0 1 2 IB / A 3 4
1 0.1
Fig.5. Typical DC current gain. hFE = f (IC) parameter VCE
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
10
VCESAT / V
BU2525A
Tj = 25 C Tj = 125 C
120 110 100 90 80 70 60 50 40 30 20 10 0
PD%
Normalised Power Derating
8A
1
6A
5A
IC = 4 A 0.1 0.1 1 IB / A 10
0
20
40
60
80 100 Tmb / C
120
140
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
Eoff / uJ IC = 8 A BU2525A
Fig.12. Normalised power dissipation. PD% = 100PD/PD 25C = f (Tmb)
Zth / (K/W) BU2525A
1000
10
1
7A 100
0.5 0.1 0.2 0.1 0.05 0.02 0.01 D=0 0.001 1E-06
P D tp D= tp T t
10 0.1 1 IB / A 10
T
1E-04
1E-02 t/s
1E+00
Fig.10. Typical turn-off losses. Tj = 85C Eoff = f (IB); parameter IC; f = 32 kHz
ts, tf / us 32 kHz BU2525A
Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T
12 11 10 9 8 7 6 5 4 3 2 1 0
ts
IC = 8A 7A 0.1 1 IB / A tf 10
Fig.11. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85C; f = 32 kHz
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
IC / A 100
BU2525A tp =
ICM ICDC 10
= 0.01
40 us
100 us
Ptot 1 1 ms
0.1
10 ms DC
0.01 1 10 100 1000 VCE / V
Fig.14. Forward bias safe operating area. Tmb = 25 C ICDC & ICM = f(VCE); ICM single pulse; parameter tp; Second-breakdown limits independant of temperature.
September 1997
5
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8 o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.15. SOT429; pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
6
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
7
Rev 1.100

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